Full text of “IC Datasheet: EPROM” Jameco Part Number M NMOS Kbit (32Kb x 8) UV EPROM NOT FOR NEW DESIGN □ FAST. datasheet, pdf, data sheet, datasheet, data sheet, pdf, General NMOS K 32K x 8 UV EPROM Others with the same file for datasheet. (EPROM). The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin.
It is organized as Two Line Output Control Because EPROMs are usually used in larger mem- ory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection.
The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of RGB traces. The data to be pro- grammed is applied 8 bits in parallel to the data output pins. When parallel programming several devices which share the common bus, Vpp should be lowered to Vcc 6V and the normal read mode used to exe- cute a program verify. STIVIicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroeiectronics.
In addition, a 4.
These are stress ratings oniy and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Up to 25 one-millisecond pulses per byte are provided for before the over program pulse is applied. This publication supersedes and replaces all information previously supplied. The duration of the initial E pulse s is 1 ms, which will then be followed by a longer over- program pulse of length 3ms by n n is equal to the number of the initial one millisecond pulses applied Table 3.
Except for E, all like inputs including G of the datasheft M may be common. The supply current, Ice, has three segments that are of interest to the system designer: Two identifier bytes may then be sequenced from the device outputs by toggling address 2725 AO from Vil to Vih.
F ceramic capacitor be used on every device between Vcc and Vss- This should be a high elrom capacitor of low inherent inductance and should be placed as close to the device as possible. If the M is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque lables be put over the M window to prevent unintentional erasure.
However, STMicroeiectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the A range. This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device.
Specifications mentioned in this publication are subject to change without notice. Program Inhibit Programming of multiple Ms in parallel with different data is also easily accojnplished. It is recommended that a 1 j. When in the standby mode, the outputs are in a high impedance state, independent of the G input.
Full text of “IC Datasheet: EPROM”
A high level E input inhibits the other Ms from being programmed. The associated transient voltage peaks can be sup- pressed by complying with the two line output control vatasheet by properly selected decoupling ca- pacitors.
The Fast Programming Algorithm utilizes two different pulse types: The M is in the programming mode when Vpp input is at 1 2. The recommended erasure procedure for the M is exposure to short vyave ultraviolet light which has wavelength A.
27256 – 27256 256K EPROM Datasheet
Output Enable G is the output control and should be used to gate data to the output pins, inde- pendent of device selection. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm.
All other address lines must be held at Vil during Electronic Signature mode. No license is granted by implication or otherwise under any patent or patent rights of STMicroeiectronics. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute Maximum Ratings” may cause permanent damage to the device. Programming reliability is also ensured as the incremental program margin of each byte is continually monitored to determine when it has been successfully programmed.
The integrated dose i. The bulk capacitor should be located near the power supply connection point.
To activate this mode, the programming equipment must force Chip Enable E is the power control and should be used for device selection. Although only “Os” will be programmed, both “1 s” and “Os” can be present in the data word. The M should be placed within 2. A new pattern can then be written to the device by following the pro- gramming procedure.
The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. The levels required forthe address and data inputs are TTL. The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device at the output.
Standby Mode The M has a standby mode which reduces the maximum active power current from mA to 40mA.
A single 5V power supply is required in the read mode. Program Verify A verify should be performed on the programmed bits to determine that they were correctly pro- grammed. For further information on any aspect of this device, please contact STMicroelectronics Sales Office nearest to you. Search the history of over billion web pages on the Internet. Research shows that constant exposure to room level fluorescent lighting could erase a typical M in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight.
Full text of ” IC Datasheet: For the STMi- croelectronics M, these two identifier bytes are given below. Data is introduced by selectively programming “Os” into the desired bit locations. The length of the Over-program Pulse varies from 2.